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MTD5N25E

Rochester Electronics · Modules

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Rochester Electronics MTD5N25E

Rochester Electronics MTD5N25E overview

Rochester Electronics LLC MTD5N25E Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:SINGLE WITH BUILT-IN DIODE, ...

Manufactured byRochester Electronics
Part number or familyMTD5N25E
Product groupModules

Product details

Manufactured byRochester Electronics
Product groupModules
DescriptionRochester Electronics LLC MTD5N25E Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:2, DS Breakdown Voltage-Min:250 V, Number of Elements:1, Drain Current-Max (ID):5 A, Drain-source On Resistance-Max:1 Ω
DescriptionRochester Electronics LLC MTD5N25E Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL,Surface Mount:YES,Configuration:SINGLE WITH BUILT-IN DIODE,Number of Terminals:2,DS Breakdown Voltage-Min:250 V,Number of Elements:1,Drain Current-Max (ID):5 A,Drain-source On Resistance-Max:1 ?

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Manufactured by Rochester Electronics View Rochester Electronics profile
Product group Modules Explore Modules Explore Transistor Explore Power Field-effect Transistors
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