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✓Product overview Rochester Electronics

MMDF3N02HDR2

Rochester Electronics · Modules

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Rochester Electronics MMDF3N02HDR2

Rochester Electronics MMDF3N02HDR2 overview

Rochester Electronics LLC MMDF3N02HDR2 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:SEPARATE, 2 ELEMENTS WIT...

Manufactured byRochester Electronics
Part number or familyMMDF3N02HDR2
Product groupModules

Product details

Manufactured byRochester Electronics
Product groupModules
DescriptionRochester Electronics LLC MMDF3N02HDR2 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE, Number of Terminals:8, DS Breakdown Voltage-Min:20 V, Number of Elements:2, Drain Current-Max (ID):3.8 A, Drain-source On Resistance-Max:90 mΩ
DescriptionRochester Electronics LLC MMDF3N02HDR2 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL,Surface Mount:YES,Configuration:SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE,Number of Terminals:8,DS Breakdown Voltage-Min:20 V,Number of Elements:2,Drain Current-Max (ID):3.8 A,Drain-source On Resistance-Max:90 m?

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Manufactured by Rochester Electronics View Rochester Electronics profile
Product group Modules Explore Modules Explore Transistor Explore Power Field-effect Transistors
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