Rochester Electronics IRFF313 overview
Rochester Electronics LLC IRFF313 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:NO, Configuration:SINGLE, Number of Terminals:3,...
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Manufactured byRochester Electronics
Product groupModules
DescriptionRochester Electronics LLC IRFF313 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:NO, Configuration:SINGLE, Number of Terminals:3, DS Breakdown Voltage-Min:350 V, Number of Elements:1, Drain Current-Max (ID):1.15 A, Drain-source On Resistance-Max:5 Ω
DescriptionRochester Electronics LLC IRFF313 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:NO, Configuration:SINGLE, Number of Terminals:3, DS Breakdown Voltage-Min:350 V, Number of Elements:1, Drain Current-Max (ID):1.15 A, Drain-source On Resistance-Max:5 Ω
DescriptionRochester Electronics LLC IRFF313 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:NO, Configuration:SINGLE, Number of Terminals:3, DS Breakdown Voltage-Min:350 V, Number of Elements:1, Drain Current-Max (ID):1.15 A, Drain-source On Resistance-Max:5 Ω
DescriptionRochester Electronics LLC IRFF313 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL,Surface Mount:NO,Configuration:SINGLE,Number of Terminals:3,DS Breakdown Voltage-Min:350 V,Number of Elements:1,Drain Current-Max (ID):1.15 A,Drain-source On Resistance-Max:5 ?
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