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IRFAC30

Rochester Electronics · Transistor

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Rochester Electronics IRFAC30

Rochester Electronics IRFAC30 overview

IRFAC30 is a transistor made by Rochester Electronics. Rochester Electronics LLC IRFAC30 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:NO, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:2, DS Breakdown Voltage-Min:600 V, Number of Elements:1, Drain Current-Max (ID):3.6…

Manufactured byRochester Electronics
Part number or familyIRFAC30
Product typeTransistor

Product details

Manufactured byRochester Electronics
Product typeTransistor
DescriptionRochester Electronics LLC IRFAC30 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:NO, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:2, DS Breakdown Voltage-Min:600 V, Number of Elements:1, Drain Current-Max (ID):3.6 A, Drain-source On Resistance-Max:2.5 Ω
DescriptionRochester Electronics LLC IRFAC30 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:NO, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:2, DS Breakdown Voltage-Min:600 V, Number of Elements:1, Drain Current-Max (ID):3.6 A, Drain-source On Resistance-Max:2.5 Ω
DescriptionRochester Electronics LLC IRFAC30 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:NO, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:2, DS Breakdown Voltage-Min:600 V, Number of Elements:1, Drain Current-Max (ID):3.6 A, Drain-source On Resistance-Max:2.5 Ω
DescriptionRochester Electronics LLC IRFAC30 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL,Surface Mount:NO,Configuration:SINGLE WITH BUILT-IN DIODE,Number of Terminals:2,DS Breakdown Voltage-Min:600 V,Number of Elements:1,Drain Current-Max (ID):3.6 A,Drain-source On Resistance-Max:2.5 ?

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Manufactured by Rochester Electronics View Rochester Electronics profile
Product type Transistor Explore Transistor Explore Power Field-effect Transistors
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