IRF620B by Rochester Electronics | StockCheck

Rochester Electronics IRF620B overview

Rochester Electronics LLC IRF620B Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:NO, Configuration:SINGLE WITH BUILT-IN DIODE, Nu...

Manufactured byRochester Electronics

Part number or familyIRF620B

Product groupModules

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Manufactured byRochester Electronics

Product groupModules

DescriptionRochester Electronics LLC IRF620B Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:NO, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:3, DS Breakdown Voltage-Min:200 V, Number of Elements:1, Drain Current-Max (ID):5 A, Drain-source On Resistance-Max:800 mΩ

DescriptionRochester Electronics LLC IRF620B Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL,Surface Mount:NO,Configuration:SINGLE WITH BUILT-IN DIODE,Number of Terminals:3,DS Breakdown Voltage-Min:200 V,Number of Elements:1,Drain Current-Max (ID):5 A,Drain-source On Resistance-Max:800 m?

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Manufactured by Rochester Electronics View Rochester Electronics profile

Product group Modules Explore Modules Explore Transistor Explore Power Field-effect Transistors

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