Rochester Electronics IRF341 overview
Rochester Electronics LLC IRF341 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:NO, Configuration:SINGLE WITH BUILT-IN DIODE, Num...
Product details
Manufactured byRochester Electronics
Product typeTransistor
DescriptionRochester Electronics LLC IRF341 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:NO, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:2, DS Breakdown Voltage-Min:350 V, Number of Elements:1, Drain Current-Max (ID):10 A, Drain-source On Resistance-Max:550 mΩ
DescriptionRochester Electronics LLC IRF341 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:NO, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:2, DS Breakdown Voltage-Min:350 V, Number of Elements:1, Drain Current-Max (ID):10 A, Drain-source On Resistance-Max:550 mΩ
DescriptionRochester Electronics LLC IRF341 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:NO, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:2, DS Breakdown Voltage-Min:350 V, Number of Elements:1, Drain Current-Max (ID):10 A, Drain-source On Resistance-Max:550 mΩ
DescriptionRochester Electronics LLC IRF341 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL,Surface Mount:NO,Configuration:SINGLE WITH BUILT-IN DIODE,Number of Terminals:2,DS Breakdown Voltage-Min:350 V,Number of Elements:1,Drain Current-Max (ID):10 A,Drain-source On Resistance-Max:550 m?
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