Rochester Electronics IRF253 overview
Rochester Electronics LLC IRF253 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:NO, Configuration:SINGLE, Number of Terminals:2, ...
Product details
Manufactured byRochester Electronics
Product typeTransistor
DescriptionRochester Electronics LLC IRF253 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:NO, Configuration:SINGLE, Number of Terminals:2, DS Breakdown Voltage-Min:150 V, Number of Elements:1, Drain Current-Max (ID):25 A, Drain-source On Resistance-Max:120 mΩ
DescriptionRochester Electronics LLC IRF253 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL,Surface Mount:NO,Configuration:SINGLE,Number of Terminals:2,DS Breakdown Voltage-Min:150 V,Number of Elements:1,Drain Current-Max (ID):25 A,Drain-source On Resistance-Max:120 m?
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Rochester Electronics
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