IRF131 by Rochester Electronics | StockCheck

Rochester Electronics IRF131 overview

Rochester Electronics LLC IRF131 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:NO, Configuration:SINGLE, Number of Terminals:2, ...

Manufactured byRochester Electronics

Part number or familyIRF131

Product groupModules

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Manufactured byRochester Electronics

Product groupModules

DescriptionRochester Electronics LLC IRF131 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:NO, Configuration:SINGLE, Number of Terminals:2, DS Breakdown Voltage-Min:80 V, Number of Elements:1, Drain Current-Max (ID):14 A, Drain-source On Resistance-Max:160 mΩ

DescriptionRochester Electronics LLC IRF131 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL,Surface Mount:NO,Configuration:SINGLE,Number of Terminals:2,DS Breakdown Voltage-Min:80 V,Number of Elements:1,Drain Current-Max (ID):14 A,Drain-source On Resistance-Max:160 m?

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Manufactured by Rochester Electronics View Rochester Electronics profile

Product group Modules Explore Modules Explore Transistor Explore Power Field-effect Transistors

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