IPI65R099C6 by Rochester Electronics | StockCheck

Rochester Electronics IPI65R099C6 overview

Rochester Electronics LLC IPI65R099C6 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:NO, Configuration:SINGLE WITH BUILT-IN DIODE...

Manufactured byRochester Electronics

Part number or familyIPI65R099C6

Product groupModules

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Manufactured byRochester Electronics

Product groupModules

DescriptionRochester Electronics LLC IPI65R099C6 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:NO, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:3, DS Breakdown Voltage-Min:650 V, Number of Elements:1, Drain-source On Resistance-Max:99 mΩ

DescriptionRochester Electronics LLC IPI65R099C6 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL,Surface Mount:NO,Configuration:SINGLE WITH BUILT-IN DIODE,Number of Terminals:3,DS Breakdown Voltage-Min:650 V,Number of Elements:1,Drain-source On Resistance-Max:99 m?

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Manufactured by Rochester Electronics View Rochester Electronics profile

Product group Modules Explore Modules Explore Transistor Explore Power Field-effect Transistors

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