Rochester Electronics FQU2N60CTU overview
Rochester Electronics LLC FQU2N60CTU Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface mount:NO, Configuration:SINGLE WITH BUILT-IN DIODE,...
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Manufactured byRochester Electronics
DescriptionRochester Electronics LLC FQU2N60CTU Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface mount:NO, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:3, DS Breakdown Voltage-Min:600 V, Number of Elements:1, Drain Current-Max (ID):1.9 A, Drain-source On Resistance-Max:4.7Ω
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