FQT4N20TF by Rochester Electronics | StockCheck

Rochester Electronics FQT4N20TF overview

Rochester Electronics LLC FQT4N20TF Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:SINGLE WITH BUILT-IN DIODE,...

Manufactured byRochester Electronics

Part number or familyFQT4N20TF

Product groupModules

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Manufactured byRochester Electronics

Product groupModules

DescriptionRochester Electronics LLC FQT4N20TF Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:4, DS Breakdown Voltage-Min:200 V, Number of Elements:1, Drain Current-Max (ID):850 mA, Drain-source On Resistance-Max:1.4 Ω

DescriptionRochester Electronics LLC FQT4N20TF Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL,Surface Mount:YES,Configuration:SINGLE WITH BUILT-IN DIODE,Number of Terminals:4,DS Breakdown Voltage-Min:200 V,Number of Elements:1,Drain Current-Max (ID):850 mA,Drain-source On Resistance-Max:1.4 ?

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Manufactured by Rochester Electronics View Rochester Electronics profile

Product group Modules Explore Modules Explore Transistor Explore Power Field-effect Transistors

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