Rochester Electronics FQPF3N40 overview
FQPF3N40 is a transistor made by Rochester Electronics. Rochester Electronics LLC FQPF3N40 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:NO, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:3, DS Breakdown Voltage-Min:400 V, Number of Elements:1, Drain Current-Max (ID):1.6…
Product details
Manufactured byRochester Electronics
Product typeTransistor
DescriptionRochester Electronics LLC FQPF3N40 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:NO, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:3, DS Breakdown Voltage-Min:400 V, Number of Elements:1, Drain Current-Max (ID):1.6 A, Drain-source On Resistance-Max:3.4 Ω
DescriptionRochester Electronics LLC FQPF3N40 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL,Surface Mount:NO,Configuration:SINGLE WITH BUILT-IN DIODE,Number of Terminals:3,DS Breakdown Voltage-Min:400 V,Number of Elements:1,Drain Current-Max (ID):1.6 A,Drain-source On Resistance-Max:3.4 ?
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Rochester Electronics
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