FQP7N80 by Rochester Electronics | StockCheck

Rochester Electronics FQP7N80 overview

FQP7N80 is a transistor made by Rochester Electronics. Rochester Electronics LLC FQP7N80 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:NO, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:3, DS Breakdown Voltage-Min:800 V, Number of Elements:1, Drain Current-Max (ID):6.6…

Manufactured byRochester Electronics

Part number or familyFQP7N80

Product typeTransistor

Product details

Manufactured byRochester Electronics

Product typeTransistor

DescriptionRochester Electronics LLC FQP7N80 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:NO, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:3, DS Breakdown Voltage-Min:800 V, Number of Elements:1, Drain Current-Max (ID):6.6 A, Drain-source On Resistance-Max:1.5 Ω

DescriptionRochester Electronics LLC FQP7N80 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL,Surface Mount:NO,Configuration:SINGLE WITH BUILT-IN DIODE,Number of Terminals:3,DS Breakdown Voltage-Min:800 V,Number of Elements:1,Drain Current-Max (ID):6.6 A,Drain-source On Resistance-Max:1.5 ?

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Manufactured by Rochester Electronics View Rochester Electronics profile

Product type Transistor Explore Transistor Explore Power Field-effect Transistors

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