FQNL2N50BBU by Rochester Electronics | StockCheck

Rochester Electronics FQNL2N50BBU overview

FQNL2N50BBU is a transistor made by Rochester Electronics. Rochester Electronics LLC FQNL2N50BBU Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:NO, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:3, DS Breakdown Voltage-Min:500 V, Number of Elements:1, Drain Current-Max…

Manufactured byRochester Electronics

Part number or familyFQNL2N50BBU

Product typeTransistor

Product details

Manufactured byRochester Electronics

Product typeTransistor

DescriptionRochester Electronics LLC FQNL2N50BBU Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:NO, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:3, DS Breakdown Voltage-Min:500 V, Number of Elements:1, Drain Current-Max (ID):350 mA, Drain-source On Resistance-Max:5.3 Ω

DescriptionRochester Electronics LLC FQNL2N50BBU Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL,Surface Mount:NO,Configuration:SINGLE WITH BUILT-IN DIODE,Number of Terminals:3,DS Breakdown Voltage-Min:500 V,Number of Elements:1,Drain Current-Max (ID):350 mA,Drain-source On Resistance-Max:5.3 ?

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Manufactured by Rochester Electronics View Rochester Electronics profile

Product type Transistor Explore Transistor Explore Power Field-effect Transistors

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