FQB9N50CFTM by Rochester Electronics | StockCheck

Rochester Electronics FQB9N50CFTM overview

FQB9N50CFTM is a transistor made by Rochester Electronics. Rochester Electronics LLC FQB9N50CFTM Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:2, DS Breakdown Voltage-Min:500 V, Number of Elements:1, Drain Current-Max…

Manufactured byRochester Electronics

Part number or familyFQB9N50CFTM

Product typeTransistor

Product details

Manufactured byRochester Electronics

Product typeTransistor

DescriptionRochester Electronics LLC FQB9N50CFTM Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:2, DS Breakdown Voltage-Min:500 V, Number of Elements:1, Drain Current-Max (ID):9 A, Drain-source On Resistance-Max:850 mΩ

DescriptionRochester Electronics LLC FQB9N50CFTM Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL,Surface Mount:YES,Configuration:SINGLE WITH BUILT-IN DIODE,Number of Terminals:2,DS Breakdown Voltage-Min:500 V,Number of Elements:1,Drain Current-Max (ID):9 A,Drain-source On Resistance-Max:850 m?

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Manufactured by Rochester Electronics View Rochester Electronics profile

Product type Transistor Explore Transistor Explore Power Field-effect Transistors

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