Rochester Electronics FQB2N50TM overview
Rochester Electronics LLC FQB2N50TM Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface mount:YES, Configuration:SINGLE WITH BUILT-IN DIODE,...
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Manufactured byRochester Electronics
Product groupModules
DescriptionRochester Electronics LLC FQB2N50TM Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface mount:YES, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:2, DS Breakdown Voltage-Min:500 V, Number of Elements:1, Drain Current-Max (ID):2.1 A, Drain-source On Resistance-Max:5.3Ω
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