Rochester Electronics FQAF5N90 overview
FQAF5N90 is a transistor made by Rochester Electronics. Rochester Electronics LLC FQAF5N90 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:NO, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:3, DS Breakdown Voltage-Min:900 V, Number of Elements:1, Drain Current-Max (ID):4.1…
Product details
Manufactured byRochester Electronics
Product typeTransistor
DescriptionRochester Electronics LLC FQAF5N90 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:NO, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:3, DS Breakdown Voltage-Min:900 V, Number of Elements:1, Drain Current-Max (ID):4.1 A, Drain-source On Resistance-Max:2.3 Ω
DescriptionRochester Electronics LLC FQAF5N90 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL,Surface Mount:NO,Configuration:SINGLE WITH BUILT-IN DIODE,Number of Terminals:3,DS Breakdown Voltage-Min:900 V,Number of Elements:1,Drain Current-Max (ID):4.1 A,Drain-source On Resistance-Max:2.3 ?
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Rochester Electronics
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