Rochester Electronics FQAF33N10 overview
Rochester Electronics LLC FQAF33N10 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:NO, Configuration:SINGLE WITH BUILT-IN DIODE, ...
Product details
Manufactured byRochester Electronics
Product typeTransistor
DescriptionRochester Electronics LLC FQAF33N10 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:NO, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:3, DS Breakdown Voltage-Min:100 V, Number of Elements:1, Drain Current-Max (ID):25.8 A, Drain-source On Resistance-Max:52 mΩ
DescriptionRochester Electronics LLC FQAF33N10 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL,Surface Mount:NO,Configuration:SINGLE WITH BUILT-IN DIODE,Number of Terminals:3,DS Breakdown Voltage-Min:100 V,Number of Elements:1,Drain Current-Max (ID):25.8 A,Drain-source On Resistance-Max:52 m?
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