FQA28N50F by Rochester Electronics | StockCheck

Rochester Electronics FQA28N50F overview

Rochester Electronics LLC FQA28N50F Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:NO, Configuration:SINGLE WITH BUILT-IN DIODE, ...

Manufactured byRochester Electronics

Part number or familyFQA28N50F

Product groupModules

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Manufactured byRochester Electronics

Product groupModules

DescriptionRochester Electronics LLC FQA28N50F Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:NO, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:3, DS Breakdown Voltage-Min:500 V, Number of Elements:1, Drain Current-Max (ID):28.4 A, Drain-source On Resistance-Max:160 mΩ

DescriptionRochester Electronics LLC FQA28N50F Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL,Surface Mount:NO,Configuration:SINGLE WITH BUILT-IN DIODE,Number of Terminals:3,DS Breakdown Voltage-Min:500 V,Number of Elements:1,Drain Current-Max (ID):28.4 A,Drain-source On Resistance-Max:160 m?

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Product group Modules Explore Modules Explore Transistor Explore Power Field-effect Transistors

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