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FQA10N60C

Rochester Electronics · Modules

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Rochester Electronics FQA10N60C

Rochester Electronics FQA10N60C overview

Rochester Electronics LLC FQA10N60C Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:NO, Configuration:SINGLE WITH BUILT-IN DIODE, ...

Manufactured byRochester Electronics
Part number or familyFQA10N60C
Product groupModules

Product details

Manufactured byRochester Electronics
Product groupModules
DescriptionRochester Electronics LLC FQA10N60C Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:NO, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:3, DS Breakdown Voltage-Min:600 V, Number of Elements:1, Drain Current-Max (ID):10 A, Drain-source On Resistance-Max:730 mΩ
DescriptionRochester Electronics LLC FQA10N60C Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL,Surface Mount:NO,Configuration:SINGLE WITH BUILT-IN DIODE,Number of Terminals:3,DS Breakdown Voltage-Min:600 V,Number of Elements:1,Drain Current-Max (ID):10 A,Drain-source On Resistance-Max:730 m?

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Manufactured by Rochester Electronics View Rochester Electronics profile
Product group Modules Explore Modules Explore Transistor Explore Power Field-effect Transistors
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