FDS8962C by Rochester Electronics | StockCheck

Rochester Electronics FDS8962C overview

Rochester Electronics LLC FDS8962C Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL AND P-CHANNEL, Surface Mount:YES, Configuration:SEPARATE, 2 EL...

Manufactured byRochester Electronics

Part number or familyFDS8962C

Product groupModules

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Manufactured byRochester Electronics

Product groupModules

DescriptionRochester Electronics LLC FDS8962C Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL AND P-CHANNEL, Surface Mount:YES, Configuration:SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE, Number of Terminals:8, DS Breakdown Voltage-Min:30 V, Number of Elements:2, Drain Current-Max (ID):7 A, Drain-source On Resistance-Max:30 mΩ

DescriptionRochester Electronics LLC FDS8962C Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL AND P-CHANNEL,Surface Mount:YES,Configuration:SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE,Number of Terminals:8,DS Breakdown Voltage-Min:30 V,Number of Elements:2,Drain Current-Max (ID):7 A,Drain-source On Resistance-Max:30 m?

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Manufactured by Rochester Electronics View Rochester Electronics profile

Product group Modules Explore Modules Explore Transistor Explore Power Field-effect Transistors

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