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FDMS8672AS

Rochester Electronics · Modules

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Rochester Electronics FDMS8672AS

Rochester Electronics FDMS8672AS overview

Rochester Electronics LLC FDMS8672AS Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:SINGLE WITH BUILT-IN DIODE...

Manufactured byRochester Electronics
Part number or familyFDMS8672AS
Product groupModules

Product details

Manufactured byRochester Electronics
Product groupModules
DescriptionRochester Electronics LLC FDMS8672AS Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:5, DS Breakdown Voltage-Min:30 V, Number of Elements:1, Drain Current-Max (ID):18 A, Drain-source On Resistance-Max:5 mΩ
DescriptionRochester Electronics LLC FDMS8672AS Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL,Surface Mount:YES,Configuration:SINGLE WITH BUILT-IN DIODE,Number of Terminals:5,DS Breakdown Voltage-Min:30 V,Number of Elements:1,Drain Current-Max (ID):18 A,Drain-source On Resistance-Max:5 m?

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Manufactured by Rochester Electronics View Rochester Electronics profile
Product group Modules Explore Modules Explore Transistor Explore Power Field-effect Transistors
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