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FDB3672

Rochester Electronics · Modules

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Rochester Electronics FDB3672

Rochester Electronics FDB3672 overview

Rochester Electronics LLC FDB3672 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:SINGLE WITH BUILT-IN DIODE, N...

Manufactured byRochester Electronics
Part number or familyFDB3672
Product groupModules

Product details

Manufactured byRochester Electronics
Product groupModules
DescriptionRochester Electronics LLC FDB3672 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:2, DS Breakdown Voltage-Min:100 V, Number of Elements:1, Drain Current-Max (ID):7.2 A, Drain-source On Resistance-Max:28 mΩ
DescriptionRochester Electronics LLC FDB3672 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL,Surface Mount:YES,Configuration:SINGLE WITH BUILT-IN DIODE,Number of Terminals:2,DS Breakdown Voltage-Min:100 V,Number of Elements:1,Drain Current-Max (ID):7.2 A,Drain-source On Resistance-Max:28 m?

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Manufactured by Rochester Electronics View Rochester Electronics profile
Product group Modules Explore Modules Explore Transistor Explore Power Field-effect Transistors
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