Rochester Electronics BUZ32H3045A overview
Rochester Electronics LLC BUZ32H3045A Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface mount:YES, Configuration:SINGLE WITH BUILT-IN DIOD...
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Manufactured byRochester Electronics
Product groupModules
DescriptionRochester Electronics LLC BUZ32H3045A Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface mount:YES, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:2, DS Breakdown Voltage-Min:200 V, Number of Elements:1, Drain Current-Max (ID):9.5 A, Drain-source On Resistance-Max:400 mΩ
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