Rochester Electronics BUZ100SE3045A overview
BUZ100SE3045A is an IC device made by Rochester Electronics. Rochester Electronics LLC BUZ100SE3045A Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:2, DS Breakdown Voltage-Min:55 V, Number of Elements:1, Drain…
Product details
Manufactured byRochester Electronics
Product typeIC Device
DescriptionRochester Electronics LLC BUZ100SE3045A Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:2, DS Breakdown Voltage-Min:55 V, Number of Elements:1, Drain Current-Max (ID):77 A, Drain-source On Resistance-Max:15 mΩ
DescriptionRochester Electronics LLC BUZ100SE3045A Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL,Surface Mount:YES,Configuration:SINGLE WITH BUILT-IN DIODE,Number of Terminals:2,DS Breakdown Voltage-Min:55 V,Number of Elements:1,Drain Current-Max (ID):77 A,Drain-source On Resistance-Max:15 m?
Manufacturer, product group, and supply
See who makes this product, where it belongs, and where available inventory may be listed.
Manufactured by
Rochester Electronics
View Rochester Electronics profile
Available from
Sourcing support available
Start a sourcing request