Rochester Electronics KSH112TM overview
Rochester Electronics LLC KSH112TM Power Bipolar Transistor, Collector-Emitter Voltage-Max:100 V, Collector Current-Max (IC):2 A, Polarity/Channel Type:NPN, Sur...
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Manufactured byRochester Electronics
Product groupModules
DescriptionRochester Electronics LLC KSH112TM Power Bipolar Transistor, Collector-Emitter Voltage-Max:100 V, Collector Current-Max (IC):2 A, Polarity/Channel Type:NPN, Surface Mount:YES, Configuration:DARLINGTON WITH BUILT-IN DIODE AND RESISTOR, Number of Terminals:2, Number of Elements:1, DC Current Gain-Min (hFE):200, Transition Frequency-Nom (fT):25 MHz
DescriptionRochester Electronics LLC KSH112TM Power Bipolar Transistor, Collector-Emitter Voltage-Max:100 V, Collector Current-Max (IC):2 A, Polarity/Channel Type:NPN, Surface mount:YES, Configuration:DARLINGTON WITH BUILT-IN DIODE AND RESISTOR, Number of Terminals:2, Number of Elements:1, DC Current Gain-Min (hFE):200, Transition Frequency-Nom (fT):25 mΩz
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