Rochester Electronics 2N5686G overview
2N5686G is a transistor made by Rochester Electronics. Rochester Electronics LLC 2N5686G Power Bipolar Transistor, Collector-Emitter Voltage-Max:80 V, Collector Current-Max (IC):50 A, Polarity/Channel Type:NPN, Surface Mount:NO, Configuration:SINGLE, Number of Terminals:2, Number of Elements:1, DC Current Gain-Min…
Product details
Manufactured byRochester Electronics
Product typeTransistor
DescriptionRochester Electronics LLC 2N5686G Power Bipolar Transistor, Collector-Emitter Voltage-Max:80 V, Collector Current-Max (IC):50 A, Polarity/Channel Type:NPN, Surface Mount:NO, Configuration:SINGLE, Number of Terminals:2, Number of Elements:1, DC Current Gain-Min (hFE):5, Transition Frequency-Nom (fT):2 MHz
DescriptionRochester Electronics LLC 2N5686G Power Bipolar Transistor, Collector-Emitter Voltage-Max:80 V, Collector Current-Max (IC):50 A, Polarity/Channel Type:NPN, Surface mount:NO, Configuration:SINGLE, Number of Terminals:2, Number of Elements:1, DC Current Gain-Min (hFE):5, Transition Frequency-Nom (fT):2 mΩz
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Rochester Electronics
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