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Manufactured byRenesas
Product groupModules
DescriptionRenesas Electronics Corporation 4AK15 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:NO, Configuration:2 BANKS, COMMON SOURCE, 2 ELEMENTS WITH BUILT-IN DIODE, Number of Terminals:10, DS Breakdown Voltage-Min:60 V, Number of Elements:4, Drain Current-Max (ID):8 A, Drain-source On Resistance-Max:95 mΩ
DescriptionRenesas Electronics Corporation 4AK15 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:NO, Configuration:2 BANKS, COMMON SOURCE, 2 ELEMENTS WITH BUILT-IN DIODE, Number of Terminals:10, DS Breakdown Voltage-Min:60 V, Number of Elements:4, Drain Current-Max (ID):8 A, Drain-source On Resistance-Max:95 mΩ
DescriptionRenesas Electronics Corporation 4AK15 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:NO, Configuration:2 BANKS, COMMON SOURCE, 2 ELEMENTS WITH BUILT-IN DIODE, Number of Terminals:10, DS Breakdown Voltage-Min:60 V, Number of Elements:4, Drain Current-Max (ID):8 A, Drain-source On Resistance-Max:95 mΩ
DescriptionRENESAS 4AK15 Semiconductors
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