Product details
Manufactured byRenesas
Product groupModules
DescriptionRenesas Electronics HSC277TRF-E PIN, SILICON EPITAXIAL PLANAR DIODE FOR UHF/VHF TUNER BAND SWITCH
DescriptionRenesas Electronics Corporation HSC277TRF-E Microwave Mixer Diode, Diode Capacitance-Max:1.2 pF, Diode Element Material:SILICON, Diode Type:MIXER DIODE, Configuration:SINGLE, Surface Mount:YES, Number of Elements:1, Technology:PLANAR DOPED BARRIER
DescriptionSILICON EPITAXIAL PLANAR DIODE FOR UHF/VHF TUNER BAND SWITCH
DescriptionRENESAS HSC277TRFE HSC277TRFE
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| # | Name |
|---|---|
| 1 | HSC277TRF-E |