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Manufactured byRenesas
Product groupModules
DescriptionRenesas Electronics Corporation 2SK1166-E Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:NO, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:3, DS Breakdown Voltage-Min:500 V, Number of Elements:1, Drain Current-Max (Abs) (ID):12 A, Drain Current-Max (ID):12 A, Drain-source On Resistance-Max:600 mΩ
DescriptionRenesas Electronics Corporation 2SK1166-E Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL,Surface Mount:NO,Configuration:SINGLE WITH BUILT-IN DIODE,Number of Terminals:3,DS Breakdown Voltage-Min:500 V,Number of Elements:1,Drain Current-Max (Abs) (ID):12 A,Drain Current-Max (ID):12 A,Drain-source On Resistance-Max:600 m?
DescriptionRENESAS 2SK1166E 2SK1166E
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| # | Name |
|---|---|
| 1 | 2SK1166-E |