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Manufactured byRenesas
Product groupModules
DescriptionRenesas Electronics Corporation RJK03B7DPA-00#J5A Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:5, DS Breakdown Voltage-Min:30 V, Number of Elements:1, Drain Current-Max (ID):30 A, Drain-source On Resistance-Max:10.7 mΩ
DescriptionRenesas Electronics Corporation RJK03B7DPA-00-J5A Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL,Surface Mount:YES,Configuration:SINGLE WITH BUILT-IN DIODE,Number of Terminals:5,DS Breakdown Voltage-Min:30 V,Number of Elements:1,Drain Current-Max (Abs) (ID):30 A,Drain Current-Max (ID):30 A,Drain-source On Resistance-Max:10.7 m?
DescriptionRENESAS RJK03B7DPA-00#J5A MOSFET N-CH 30V 30A W-PAK WDFN-8
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