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Manufactured byRenesas
Product groupModules
DescriptionRenesas Electronics HAT2160H-EL-E MOSFET, Trans MOSFET N-CH Si 20V 60A 5-Pin(4+Tab) LFPAK T/R
DescriptionRenesas Electronics Corporation HAT2160H-EL-E Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:4, DS Breakdown Voltage-Min:20 V, Number of Elements:1, Drain Current-Max (Abs) (ID):60 A, Drain Current-Max (ID):60 A, Drain-source On Resistance-Max:4.1 mΩ
DescriptionRenesas Electronics Corporation HAT2160H-EL-E Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:4, DS Breakdown Voltage-Min:20 V, Number of Elements:1, Drain Current-Max (Abs) (ID):60 A, Drain Current-Max (ID):60 A, Drain-source On Resistance-Max:4.1 mΩ
DescriptionRenesas Electronics America HAT2160H-EL-E Discrete Semiconductor, MOSFET N-CH 20V 60A LFPAK
DescriptionMOSFET N-CH 20V 60A LFPAK
DescriptionRENESAS HAT2160H-EL-E Silicon N Channel Power MOS FET /Switching 20V 60A LFPAK PBF
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