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Manufactured byRenesas
Product groupModules
DescriptionRenesas Electronics Corporation 2SK2220-E Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:NO, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:3, Number of Elements:1, Drain Current-Max (Abs) (ID):8 A, Drain Current-Max (ID):8 A
DescriptionRenesas Electronics Corporation 2SK2220-E Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL,Surface Mount:NO,Configuration:SINGLE WITH BUILT-IN DIODE,Number of Terminals:3,Number of Elements:1,Drain Current-Max (Abs) (ID):8 A,Drain Current-Max (ID):8 A
DescriptionRENESAS 2SK2220-E MOSFET, N TO-3PMOSFET, N TO-3P Transistor type:MOSFET Transistor polarity:N Voltage, Vds max:180V Case style:TO-3P Current, Id cont:8A Current, Idm pulse:8A Power, Pd:100W Resistance, Rds on:1.5R Pin format:1 g 2 s 3 d RoHS Compliant: Yes
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