Product details
Manufactured byRenesas
Product groupModules
DescriptionRenesas Electronics 2SK1317-E MOSFET, Trans MOSFET N-CH Si 1.5KV 2.5A 3-Pin(3+Tab) TO-3P Tube
DescriptionRenesas Electronics Corporation 2SK1317-E Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:NO, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:3, DS Breakdown Voltage-Min:1.5 kV, Number of Elements:1, Drain Current-Max (Abs) (ID):2.5 A, Drain Current-Max (ID):2.5 A, Drain-source On Resistance-Max:12 Ω
DescriptionRenesas Electronics Corporation 2SK1317-E Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:NO, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:3, DS Breakdown Voltage-Min:1.5 kV, Number of Elements:1, Drain Current-Max (Abs) (ID):2.5 A, Drain Current-Max (ID):2.5 A, Drain-source On Resistance-Max:12 Ω
DescriptionRenesas Electronics America 2SK1317-E Discrete Semiconductor, MOSFET N-CH 1500V 2.5A TO-3P
DescriptionMOSFET N-CH 1500V 2.5A TO-3P
DescriptionRenesas Electronics Corporation 2SK1317-E Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:NO, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:3, DS Breakdown Voltage-Min:1.5 kV, Number of Elements:1, Drain Current-Max (Abs) (ID):2.5 A, Drain Current-Max (ID):2.5 A, Drain-source On Resistance-Max:12 Ω
DescriptionRENESAS 2SK1317-E MOSFET, N TO-3PMOSFET, N TO-3P Transistor type:MOSFET Transistor polarity:N Voltage, Vds max:1500V Case style:TO-3P Current, Id cont:2.5A Current, Idm pulse:7A Power, Pd:100W Resistance, Rds on:12R Pins, No. of:3 Pitch, RoHS Compliant: Yes
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