Product details
Manufactured byRenesas
Product groupModules
DescriptionRenesas Electronics Corporation 2SJ221-E Power Field-effect Transistor, Polarity/Channel Type:P-CHANNEL, Surface Mount:NO, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:3, DS Breakdown Voltage-Min:100 V, Number of Elements:1, Drain Current-Max (Abs) (ID):20 A, Drain Current-Max (ID):20 A, Drain-source On Resistance-Max:220 mΩ
DescriptionRENESAS 2SJ221-E MOSFET, P LOGIC TO-220MOSFET, P LOGIC TO-220 Transistor type:MOSFET Transistor polarity:P Voltage, Vds max:100V Case style:TO-220AB Current, Id cont:20A Current, Idm pulse:80A Power, Pd:75W Resistance, Rds on:0.22R Pins, No. RoHS Compliant: Yes
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