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RJP60V0DPM-00#T1

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Renesas RJP60V0DPM-00#T1

Renesas RJP60V0DPM-00#T1 overview

Renesas Electronics Corporation RJP60V0DPM-00#T1 Igbt, Collector-Emitter Voltage-Max:600 V, Gate-Emitter Thr Voltage-Max:7.5 V, Collector Current-Max (IC):45 A,...

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Part number or familyRJP60V0DPM-00#T1
Product groupModules

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Manufactured byRenesas
Product groupModules
DescriptionRenesas Electronics Corporation RJP60V0DPM-00#T1 Igbt, Collector-Emitter Voltage-Max:600 V, Gate-Emitter Thr Voltage-Max:7.5 V, Collector Current-Max (IC):45 A, Polarity/Channel Type:N-CHANNEL, Surface Mount:NO, Configuration:SINGLE, Number of Terminals:3, Number of Elements:1
DescriptionRenesas Electronics America RJP60V0DPM-00#T1 Discrete Semiconductor, IGBT 600V 45A 40W TO-3PFM
DescriptionIGBT 600V 45A 40W TO-3PFM
DescriptionTrans IGBT Chip N-CH 600V 45A 40000mW 3-Pin(3+Tab) TO-3PFM Tube
DescriptionRENESAS RJP60V0DPM-00#T1 IGBT Renesas RJP60V0DPM-00#T1 TP 3PFM single Standard 600 V

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