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RJH60M1DPE-00#J3

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Renesas RJH60M1DPE-00#J3

Renesas RJH60M1DPE-00#J3 overview

Renesas Electronics Corporation RJH60M1DPE-00-J3 Igbt, Collector-Emitter Voltage-Max:600 V, Gate-Emitter Thr Voltage-Max:7 V, Collector Current-Max (IC):16 A, P...

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Part number or familyRJH60M1DPE-00#J3
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Manufactured byRenesas
Product groupModules
DescriptionRenesas Electronics Corporation RJH60M1DPE-00-J3 Igbt, Collector-Emitter Voltage-Max:600 V, Gate-Emitter Thr Voltage-Max:7 V, Collector Current-Max (IC):16 A, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:2, Number of Elements:1
DescriptionRenesas Electronics America RJH60M1DPE-00#J3 Discrete Semiconductor, IGBT 600V 16A 52W LDPAK
DescriptionIGBT 600V 16A 52W LDPAK
DescriptionTrans IGBT Chip N-CH 600V 16A 52000mW 3-Pin(2+Tab) LDPAK(S)-1 T/R
DescriptionRENESAS RJH60M1DPE-00#J3 IGBT Renesas RJH60M1DPE-00#J3 LDPAK 4 single Standard 600 V

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1 RJH60M1DPE-00-J3