Product details
Manufactured byRenesas
Product groupModules
DescriptionRenesas Electronics Corporation RJH60F3DPQ-A0-T0 Igbt, Collector-Emitter Voltage-Max:600 V, Gate-Emitter Thr Voltage-Max:8 V, Collector Current-Max (IC):40 A, Polarity/Channel Type:N-CHANNEL, Surface Mount:NO, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:3, Number of Elements:1
DescriptionRenesas Electronics America RJH60F3DPQ-A0#T0 Discrete Semiconductor, IGBT 600V 40A 178.5W TO-247A
DescriptionIGBT 600V 40A 178.5W TO-247A
DescriptionTrans IGBT Chip N-CH 600V 40A 178500mW 3-Pin(3+Tab) TO-247A
DescriptionRENESAS RJH60F3DPQ-A0#T0 IGBT Renesas RJH60F3DPQ-A0#T0 TO 247A single Standard 600 V
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Renesas
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Modules
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| # | Name |
|---|---|
| 1 | RJH60F3DPQ-A0-T0 |