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Manufactured byRenesas
Product groupModules
DescriptionRenesas Electronics Corporation TBB1010 Rf Small Signal Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:COMMON SOURCE, 2 ELEMENTS, Number of Terminals:6, DS Breakdown Voltage-Min:6 V, Highest Frequency Band:VERY HIGH FREQUENCY BAND, Number of Elements:2, Drain Current-Max (Abs) (ID):20 mA, Power Gain-Min (Gp):25 dB, Drain Current-Max (ID):30 mA
DescriptionRenesas Electronics Corporation TBB1010 Rf Small Signal Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface mount:YES, Configuration:COMMON SOURCE, 2 ELEMENTS, Number of Terminals:6, DS Breakdown Voltage-Min:6 V, Highest Frequency Band:VERY HIGH FREQUENCY BAND, Number of Elements:2, Drain Current-Max (Abs) (ID):20 mΩ, Power Gain-Min (Gp):25 dB, Drain Current-Max (ID):30 mΩ
DescriptionRENESAS TBB1010 Twin Build in Biasing Circuit MOS FET IC VHF/VHF RF Amplifier
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