Product details
Manufactured byRenesas
Product groupModules
DescriptionRenesas Electronics Corporation R1WV3216RSD-7SI Sram, Memory Density:33.5544 Mbit, Memory Width:16, Organization:2MX16, Supply Voltage-Nom (Vsup):3 V, Power Supplies:3/3.3 V, Access Time-Max:70 ns
DescriptionRenesas Electronics Corporation R1WV3216RSD-7SI Sram, Memory Density:33.5544 Mbit, Memory Width:16, Organization:2MX16, Supply Voltage-Nom (Vsup):3 V, Power Supplies:3/3.3 V, Access Time-Max:70 ns
DescriptionRENESAS R1WV3216RSD7SI Integrated Circuit, Silicon Bipolar MMICAmplifier (Cascadable 50 Wgain block 9 dB typical gain at 1 Silicon Bipolar MMICAmplifier (Cascadable 50 Wgain block 9 dB typical gain at 1
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| # | Name |
|---|---|
| 1 | R1WV3216RSD-7SI |