Product details
Manufactured byRenesas
Product groupModules
DescriptionRenesas Electronics Corporation R1RW0416DSB-2PR Sram, Memory Density:4.1943 Mbit, Memory Width:16, Organization:256KX16, Supply Voltage-Nom (Vsup):3.3 V, Power Supplies:3.3 V, Access Time-Max:12 ns
DescriptionRenesas Electronics Corporation R1RW0416DSB-2PR Sram, Memory Density:4.1943 Mbit, Memory Width:16, Organization:256KX16, Supply Voltage-Nom (Vsup):3.3 V, Power Supplies:3.3 V, Access Time-Max:12 ns
DescriptionRENESAS R1RW0416DSB2PR Integrated Circuit, NPN Silicon HighVoltage Transistors (Suitable for video output stages in TV sets and switching power supplies High breakdown voltage) NPN Silicon HighVoltage Transistors (Suitable for video output stages in TV sets and switching power supplies High break
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| # | Name |
|---|---|
| 1 | R1RW0416DSB-2PR |