Product details
Manufactured byRenesas
Product groupModules
DescriptionRenesas Electronics Corporation R1RW0416DGE-2PR Sram, Memory Density:4.1943 Mbit, Memory Width:16, Organization:256KX16, Supply Voltage-Nom (Vsup):3.3 V, Power Supplies:3.3 V, Access Time-Max:12 ns
DescriptionRenesas Electronics Corporation R1RW0416DGE-2PR Sram, Memory Density:4.1943 Mbit, Memory Width:16, Organization:256KX16, Supply Voltage-Nom (Vsup):3.3 V, Power Supplies:3.3 V, Access Time-Max:12 ns
DescriptionRENESAS R1RW0416DGE2PR Integrated Circuit, PNP Silicon RF Transistor (fOR OSCILLATORS, MIXERS and SELFOSCILLATING MIXER STAGES IN uhf tv TUNERS) PNP Silicon RF Transistor (fOR OSCILLATORS, MIXERS and SELFOSCILLATING MIXER STAGES IN uhf tv TUNERS)
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Renesas
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| # | Name |
|---|---|
| 1 | R1RW0416DGE-2PR |
