Product details
Manufactured byRenesas
Product groupModules
DescriptionRenesas Electronics Corporation R1RW0416DGE-2LR Sram, Memory Density:4.1943 Mbit, Memory Width:16, Organization:256KX16, Supply Voltage-Nom (Vsup):3.3 V, Power Supplies:3.3 V, Access Time-Max:12 ns
DescriptionRenesas Electronics Corporation R1RW0416DGE-2LR Sram, Memory Density:4.1943 Mbit, Memory Width:16, Organization:256KX16, Supply Voltage-Nom (Vsup):3.3 V, Power Supplies:3.3 V, Access Time-Max:12 ns
DescriptionRENESAS R1RW0416DGE2LR Integrated Circuit, PNP Silicon RF Transistor (For broadband amplifiers up to 2 GHz at collector currents up to 20 mA PNP Silicon RF Transistor (For broadband amplifiers up to 2 GHz at collector currents up to 20 mA
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| # | Name |
|---|---|
| 1 | R1RW0416DGE-2LR |