Product details
Manufactured byRenesas
Product groupModules
DescriptionRenesas Electronics Corporation R1RW0408DGE-2PR Sram, Memory Density:4.1943 Mbit, Memory Width:8, Organization:512KX8, Supply Voltage-Nom (Vsup):3.3 V, Power Supplies:3.3 V, Access Time-Max:12 ns
DescriptionRenesas Electronics Corporation R1RW0408DGE-2PR Sram, Memory Density:4.1943 Mbit, Memory Width:8, Organization:512KX8, Supply Voltage-Nom (Vsup):3.3 V, Power Supplies:3.3 V, Access Time-Max:12 ns
DescriptionRENESAS R1RW0408DGE2PR Integrated Circuit, PNP Silicon RF Transistor (For broadband amplifiers up to 2 GHz at collector currents from 5 mA to 30 mA PNP Silicon RF Transistor (For broadband amplifiers up to 2 GHz at collector currents from 5 mA to 30 mA
Manufacturer, product group, and supply
See who makes this product, where it belongs, and where available inventory may be listed.
Manufactured by
Renesas
View Renesas profile
Available from
Sourcing support available
Start a sourcing request
| # | Name |
|---|---|
| 1 | R1RW0408DGE-2PR |