Product details
Manufactured byRenesas
Product groupModules
DescriptionRenesas Electronics Corporation R1RW0404DGE-2PR Sram, Memory Density:4.1943 Mbit, Memory Width:4, Organization:1MX4, Supply Voltage-Nom (Vsup):3.3 V, Power Supplies:3.3 V, Access Time-Max:12 ns
DescriptionRenesas Electronics Corporation R1RW0404DGE-2PR Sram, Memory Density:4.1943 Mbit, Memory Width:4, Organization:1MX4, Supply Voltage-Nom (Vsup):3.3 V, Power Supplies:3.3 V, Access Time-Max:12 ns
DescriptionRENESAS R1RW0404DGE2PR Integrated Circuit, NPN Silicon RF Transistor (For lownoise amplifiers in the GHz range, and broadband analog and digital applications) NPN Silicon RF Transistor (For lownoise amplifiers in the GHz range, and broadband analog and digital applications)
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| # | Name |
|---|---|
| 1 | R1RW0404DGE-2PR |