Product details
Manufactured byRenesas
Product groupModules
DescriptionRenesas Electronics Corporation R1RP0416DSB-2PR Sram, Memory Density:4.1943 Mbit, Memory Width:16, Organization:256KX16, Supply Voltage-Nom (Vsup):5 V, Power Supplies:5 V, Access Time-Max:12 ns
DescriptionRenesas Electronics Corporation R1RP0416DSB-2PR Sram, Memory Density:4.1943 Mbit, Memory Width:16, Organization:256KX16, Supply Voltage-Nom (Vsup):5 V, Power Supplies:5 V, Access Time-Max:12 ns
DescriptionRENESAS R1RP0416DSB2PR Integrated Circuit, NPN Silicon RF Transistor (For lowdistortion broadband amplifiers up to 2 GHz at collector currents from 10 mA to 30 mA NPN Silicon RF Transistor (For lowdistortion broadband amplifiers up to 2 GHz at collector currents from 10 mA to 30 mA
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| # | Name |
|---|---|
| 1 | R1RP0416DSB-2PR |