Product details
Manufactured byRenesas
Product groupModules
DescriptionRenesas Electronics Corporation R1RP0416DGE-2PR Sram, Memory Density:4.1943 Mbit, Memory Width:16, Organization:256KX16, Supply Voltage-Nom (Vsup):5 V, Power Supplies:5 V, Access Time-Max:12 ns
DescriptionRenesas Electronics Corporation R1RP0416DGE-2PR Sram, Memory Density:4.1943 Mbit, Memory Width:16, Organization:256KX16, Supply Voltage-Nom (Vsup):5 V, Power Supplies:5 V, Access Time-Max:12 ns
DescriptionRENESAS R1RP0416DGE2PR Integrated Circuit, NPN Silicon RF Transistor (For lownoise IF and broadband amplifiers in antenna and telecommunications systems at collector currents from 2mA to 20mA) NPN Silicon RF Transistor (For lownoise IF and broadband amplifiers in antenna and telecommunications sy
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| # | Name |
|---|---|
| 1 | R1RP0416DGE-2PR |