Product details
Manufactured byRenesas
Product groupModules
DescriptionRenesas Electronics Corporation R1RP0416DGE-2LR Sram, Memory Density:4.1943 Mbit, Memory Width:16, Organization:256KX16, Supply Voltage-Nom (Vsup):5 V, Power Supplies:5 V, Access Time-Max:12 ns
DescriptionRenesas Electronics Corporation R1RP0416DGE-2LR Sram, Memory Density:4.1943 Mbit, Memory Width:16, Organization:256KX16, Supply Voltage-Nom (Vsup):5 V, Power Supplies:5 V, Access Time-Max:12 ns
DescriptionRENESAS R1RP0416DGE2LR Integrated Circuit, Silicon Switching Diode (For highspeed switching) Silicon Switching Diode (For highspeed switching)
Manufacturer, product group, and supply
See who makes this product, where it belongs, and where available inventory may be listed.
Manufactured by
Renesas
View Renesas profile
Available from
Sourcing support available
Start a sourcing request
| # | Name |
|---|---|
| 1 | R1RP0416DGE-2LR |