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R1RP0408DGE2PR

Renesas ยท Modules

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Renesas R1RP0408DGE2PR

Renesas R1RP0408DGE2PR overview

Renesas Electronics Corporation R1RP0408DGE-2PR Sram, Memory Density:4.1943 Mbit, Memory Width:8, Organization:512KX8, Supply Voltage-Nom (Vsup):5 V, Power Supp...

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Part number or familyR1RP0408DGE2PR
Product groupModules

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Manufactured byRenesas
Product groupModules
DescriptionRenesas Electronics Corporation R1RP0408DGE-2PR Sram, Memory Density:4.1943 Mbit, Memory Width:8, Organization:512KX8, Supply Voltage-Nom (Vsup):5 V, Power Supplies:5 V, Access Time-Max:12 ns
DescriptionRenesas Electronics Corporation R1RP0408DGE-2PR Sram, Memory Density:4.1943 Mbit, Memory Width:8, Organization:512KX8, Supply Voltage-Nom (Vsup):5 V, Power Supplies:5 V, Access Time-Max:12 ns
DescriptionRENESAS R1RP0408DGE2PR Integrated Circuit, PNP Silicon Transistors (High breakdown voltage Low collectoremitter saturation voltage) PNP Silicon Transistors (High breakdown voltage Low collectoremitter saturation voltage)

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# Name
1 R1RP0408DGE-2PR