Product details
Manufactured byRenesas
Product groupModules
DescriptionRenesas Electronics Corporation R1RP0408DGE-2LR Sram, Memory Density:4.1943 Mbit, Memory Width:8, Organization:512KX8, Supply Voltage-Nom (Vsup):5 V, Power Supplies:5 V, Access Time-Max:12 ns
DescriptionRenesas Electronics Corporation R1RP0408DGE-2LR Sram, Memory Density:4.1943 Mbit, Memory Width:8, Organization:512KX8, Supply Voltage-Nom (Vsup):5 V, Power Supplies:5 V, Access Time-Max:12 ns
DescriptionRENESAS R1RP0408DGE2LR Integrated Circuit, NPN Silicon Transistors (High breakdown voltage l Low collectoremitter saturation voltage) NPN Silicon Transistors (High breakdown voltage l Low collectoremitter saturation voltage)
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| # | Name |
|---|---|
| 1 | R1RP0408DGE-2LR |